This digital document is an article from Polymer Engineering and Science, published by Society of Plastics Engineers, Inc. on October 1, 1994. The length of the article is 7525 words. The page length shown above is based on a typical 300-word page. The article is delivered in HTML format and is available in your Amazon.com Digital Locker immediately after purchase. You can view it with any web browser.

From the author: A model is developed to describe the evolution of dielectric behavior during the cure of epoxy resins and of blends containing soluble polymeric additives. Data on cure kinetics are used to predict: (a) changes in viscosity and hence in ion mobility; (b) gelation times; (c) vitrification times; and (d) dipolar relaxation times, for both resin and blends. These predictions are then used in conjunction with the Maxwell-Wagner-Sillars (MWS) theory to calculate dielectric permittivity [Epsilon][prime] and loss [Epsilon][double prime] as functions of cure time and test frequency in both resin and blends. The predictions are compared with experimental data on dielectric behavior obtained during cure of both neat epoxy resin and of blends containing 15 wt% CTBN (carboxyl-terminated poly(butadiene-co-acrylonitrile)).

Citation Details
Title: Modeling the dielectric behavior of epoxy and resin blends during curing.
Author: George M. Maistros
Publication: Polymer Engineering and Science (Refereed)
Date: October 1, 1994
Publisher: Society of Plastics Engineers, Inc.
Volume: v34 Issue: n20 Page: p1517(12)

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An accurate quantitative picture of electric field distribution is essential in many electrical and electronic applications. In composite dielectric configurations composed of multiple dielectrics, anomalous or unexpected behavior of electric fields may appear when a solid dielectric is in contact with a conductor or another solid dielectric. The electric field near the contact point may become higher than the original field not only in the surrounding medium but also in the solid dielectric. Theoretically it may become infinitely high, depending on the contact angle. Although these characteristics are very important in a variety of applications, they have been clarified only recently using analytical and numerical calculation methods, and this is the first book to cover these new findings. Electric Fields in Composite Dielectrics and Their Applications describes the fundamental characteristics and practical applications of electric fields in composite dielectrics. The focus is on the field distribution (and the resultant force when appropriate) near points of contact. Applications include insulation design of high-voltage equipment with solid insulating supports, utilization of electrostatic force on dielectric particles in electrophotography and electrorheological fluids, and others. Electric Fields in Composite Dielectrics and Their Applications also explains the calculation methods used to analyze electric fields in composite dielectrics.

This is the definite reference text on dielectric resonators used in filters and oscillators. This second edition includes corrections and updates, a new chapter on how to use the program included on a new disk. Sections are devoted to properties of materials, coupling techniques and filter and oscillator design using dielectric resonators. Programs implement the models presented in the book and identify the frequencies of all the modes.

Presents the fundamental physics of piezoelectric sensors. Only book with this scope Targeted to those engineers, phycisists and chemists who are involved in materials processing, device design and manufacturing.

The development of functional materials is at the heart of technological needs and the forefront of materials research. This book provides a comprehensive and up-to-date treatment of functional materials, which are needed for electrical, dielectric, electromagnetic, optical, and magnetic applications. Materials concepts covered are strongly linked to applications.

Textbooks related to functional materials have not kept pace with technological needs and associated scientific advances. Introductory materials science textbooks merely gloss over functional materials while electronic materials textbooks focus on semiconductors and smart materials textbooks emphasize more on limited properties that pertain to structures.

Functional Materials assumes that the readers have had a one-semester introductory undergraduate course on materials science. The coverage on functional materials is much broader and deeper than that of an introductory materials science course.

The book features hundreds of illustrations to help explain concepts and provide quantitative information. The style is general towards tutorial. Most chapters include sections on example problems, review questions and supplementary reading.

This book is suitable for use as a textbook in undergraduate and graduate engineering courses. It is also suitable for use as a reference book for professionals in the electronic, computer, communication, aerospace, automotive, transportation, construction, energy and control industries.

This is a reproduction of a book published before 1923. This book may have occasional imperfections such as missing or blurred pages, poor pictures, errant marks, etc. that were either part of the original artifact, or were introduced by the scanning process. We believe this work is culturally important, and despite the imperfections, have elected to bring it back into print as part of our continuing commitment to the preservation of printed works worldwide. We appreciate your understanding of the imperfections in the preservation process, and hope you enjoy this valuable book.

This book presents the fundamentals of novel gate dielectrics that are being introduced into semiconductor manufacturing to ensure the continuous scaling of CMOS devices. As this is a rapidly evolving field of research we choose to focus on the materials that determine the performance of device applications. Most of these materials are transition metal oxides. Ironically, the d-orbitals responsible for the high dielectric constant cause severe integration difficulties, thus intrinsically limiting high-k dielectrics. Though new in the electronics industry many of these materials are well-known in the field of ceramics, and we describe this unique connection. The complexity of the structure-property relations in TM oxides requires the use of state-of-the-art first-principles calculations. Several chapters give a detailed description of the modern theory of polarization, and heterojunction band discontinuity within the framework of the density functional theory. Experimental methods include oxide melt solution calorimetry and differential scanning calorimetry, Raman scattering and other optical characterization techniques, transmission electron microscopy, and X-ray photoelectron spectroscopy.

Many of the problems encountered in the world of CMOS are also relevant for other semiconductors such as GaAs. A comprehensive review of recent developments in this field is thus also given.

A comprehensive survey of research on dielectric and dielectric-loaded antennas, providing a critical review of work carried out over the past thirty-five years. Covers a wide range of antenna shapes, types, and practical applications at microwave and millimetre wave frequencies.

According to Moore’s Law, not only does the number of transistors in an integrated circuit double every two years, but transistor size also decreases at a predictable rate. At the rate we are going, the downsizing of CMOS transistors will reach the deca-nanometer scale by 2020. Accordingly, the gate dielectric thickness will be shrunk to less than half-nanometer oxide equivalent thickness (EOT) to maintain proper operation of the transistors, leaving high-k materials as the only viable solution for such small-scale EOT.

This comprehensive, up-to-date text covering the physics, materials, devices, and fabrication processes for high-k gate dielectric materials, Nano-CMOS Gate Dielectric Engineering systematically describes how the fundamental electronic structures and other material properties of the transition metals and rare earth metals affect the electrical properties of the dielectric films, the dielectric/silicon and the dielectric/metal gate interfaces, and the resulting device properties. Specific topics include the problems and solutions encountered with high-k material thermal stability, defect density, and poor initial interface with silicon substrate. The text also addresses the essence of thin film deposition, etching, and process integration of high-k materials in an actual CMOS process.

Fascinating in both content and approach, Nano-CMOS Gate Dielectric Engineering explains all of the necessary physics in a highly readable manner and supplements this with numerous intuitive illustrations and tables. Covering almost every aspect of high-k gate dielectric engineering for nano-CMOS technology, this is a perfect reference book for graduate students needing a better understanding of developing technology as well as researchers and engineers needing to get ahead in microelectronic engineering and materials science.